Effects of silicon via profile on passivation and metallization in TSV interposers for 2.5D integration
Year: 2015
Type: article
Source: Microelectronic Engineering
Authors: P.R. Lin, G.Q. Zhang, H.W. van Zeijl, B.H. Lian, Y. Wang, Q.B. Yao
Language: English
Topic: 3D IC and TSV technologies
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2016999624