Year: 2014
Type: article
Abstract: Zinc oxide (ZnO) is one of the most promising transparent conducting oxides for use in electronics, but to realize its potential we must better understand how its semiconductor physics depends on its material properties, particularly the interaction of defects with dopants. This study identifies the Al${}_{Z\phantom{\rule{0}{0ex}}n}$-${V}_{Z\phantom{\rule{0}{0ex}}n}$ complex as a defect of crucial and general importance that limits the $n$-type doping efficiency and thus the performance of ZnO. Similar effects are anticipated for other shallow $n$-type dopants as well.
Source: Physical Review Applied
Institutions: Linköping University, University of Oslo
Language: English
Topic: ZnO doping and properties
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
Funders: Vetenskapsrådet, Norges Forskningsråd
Award: G224645851
OpenAlex ID: W2017087430