Work

Effect of Hf incorporation in solution-processed NiOx based resistive random access memory

Year: 2014

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.4867233

Authors: Doo Hyun Yoon, Si Joon Kim, Joohye Jung, Seung Jin Heo, Hyun Jae Kim

Institution: Yonsei University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2017108339

FWCI: 1.035

Cites: 22

Cited by: 12

Related to: 10