Work

Highly reliable a-InGaZnO thin film transistors with new SiNx gate insulators

Year: 2012

Type: conference-paper

Source: IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

DOI: 10.1109/imfedk.2012.6218582

Authors: Haruka Yamazaki, Mami Fujii, Yoshihiro Ueoka, Yasuaki Ishikawa, Yasuharu Uraoka, Masaki Fujiwara, Eiji Takahashi

Institutions: Nara Institute of Science and Technology, Nissin Electric Co., Ltd. (Japan)

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2017239830

FWCI: 0.81

Cites: 4

Cited by: 3

Related to: 10