Work

The low electric field conduction mechanism of silicon oxide-silicon nitride-silicon oxide interpoly-Si dielectrics

Year: 1995

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.359908

Authors: T. Maruyama, R. Shirota

Institution: Toshiba (Japan)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2017244561

FWCI:

Cites: 3

Cited by: 7

Related to: 10