Work

Minority-carrier lifetime and defect content of n-type silicon grown by the noncontact crucible method

Year: 2014

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2014.08.021

Authors: Maulid Kivambe, Douglas M. Powell, Sergio Castellanos, Mallory Ann Jensen, Ashley E. Morishige, Kazuo Nakajima, Kohei Morishita, Ryota Murai, Tonio Buonassisi

Institutions: Massachusetts Institute of Technology, Kyoto University

Language: English

Topic: Silicon and Solar Cell Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funders: National Science Foundation, U.S. Department of Defense, U.S. Department of Energy, Ministry of Education, Culture, Sports, Science and Technology, Office of Science, National Defense Science and Engineering Graduate, Japan Science and Technology Agency, Basic Energy Sciences

Awards: G426311843, G78394265, G825080086

OpenAlex ID: W2017246168

FWCI: 4.313

Cites: 47

Cited by: 38

Related to: 10