Work

Voltage Gain of Si Single-Electron Transistor and Analysis of Performance of n-Metal-Oxide-Semiconductor Type Inverter with Resistive Load

Year: 2002

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.41.458

Authors: Kuang-Ting Liu, Akira Fujiwara, Yasuo Takahashi, Katsumi Murase, Yoshiji Horikoshi

Institutions: NTT (Japan), NTT Basic Research Laboratories, Waseda University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2017248578

FWCI: 1.376

Cites: 3

Cited by: 9

Related to: 10