Work

The diffuse scattering model of effective mobility in the strongly inverted layer of MOS transistors

Year: 1974

Type: article

Source: Solid-State Electronics

DOI: 10.1016/0038-1101(74)90025-2

Authors: G. Baccarani, A.M. Mazzone, C. Morandi

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2017288211

FWCI: 2.254

Cites:

Cited by: 20

Related to: 10