Work

Temperature distribution over a GaAs heterojunction bipolar transistor measured by fluorescent microthermal imaging

Year: 2000

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/1.582173

Authors: N. Boyer, B. Oliver, A. Hagley, D. P. Masson, Martine Simard-Normandin, Michel Meunier

Institutions: Nortel (Canada), Polytechnique Montréal

Language: English

Topic: Integrated Circuits and Semiconductor Failure Analysis

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2017309803

FWCI:

Cites: 3

Cited by: 2

Related to: 10