Work

Simulation of the high frequency C–V characteristics of lateral PN junctions on polysilicon films

Year: 1997

Type: article

Source: Materials Science and Engineering B

DOI: 10.1016/s0921-5107(97)00101-3

Authors: M Amrani, R Menezla, H Sehil, F Raoult, H Boudiaf, Z Benamara

Institutions: Université Djilali de Sidi Bel Abbès, Centre National de la Recherche Scientifique

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2017395381

FWCI: 0.304

Cites: 14

Cited by: 9

Related to: 10