Work

Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs

Year: 2012

Type: conference-paper

Source: European Solid-State Device Research Conference

DOI: 10.1109/essderc.2012.6343401

Authors: Christoforos G. Theodorou, Eleftherios G. Ioannidis, Sebastien Haendler, Nicolas Planes, Franck Arnaud, Jalal Jomaah, Charalabos A. Dimitriadis, Gerard Ghibaudo

Institutions: Aristotle University of Thessaloniki, Micro and Nanotechnology Innovation Centre, Institut de Microélectronique, Electromagnétisme et Photonique, Centre de Radiofréquences, Optique et Micro-nanoélectronique des Alpes, STMicroelectronics (France)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2017488097

FWCI: 3.25

Cites: 10

Cited by: 24

Related to: 10