Work

Achievement of High Density InAs/GaInAsP Quantum Dots on Misoriented InP(001) Substrates Emitting at 1.55 µm

Year: 2009

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.48.070204

Authors: Georges Elias, Antoine Létoublon, Rozenn Piron, Ibrahim Alghoraibi, Abdulhadi Nakkar, Nicolas Chevalier, Karine Tavernier, Alain Le Corre, Nicolas Bertru, Slimane Loualiche

Institutions: Centre National de la Recherche Scientifique, Institut National des Sciences Appliquées de Rennes, Fonctions Optiques pour les Technologies de l’information

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: European Commission, Région Bretagne

OpenAlex ID: W2017505325

FWCI: 0.333

Cites: 14

Cited by: 14

Related to: 10