Work

Characterization of Mn-doped 3C-SiC prepared by ion implantation

Year: 2007

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.2709749

Authors: Fumiyoshi Takano, Wenhong Wang, Hiro Akinaga, Hironori Ofuchi, Shigeomi Hishiki, Takeshi Ohshima

Institutions: National Institute of Advanced Industrial Science and Technology, Japan Synchrotron Radiation Research Institute, Japan Atomic Energy Agency

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Japan Society for the Promotion of Science

OpenAlex ID: W2017511476

FWCI: 1.486

Cites: 14

Cited by: 23

Related to: 10