Work

Characterization of a self-aligned RTP titanium disilicide MOS process: titanium-silicon dioxide interaction

Year: 1991

Type: article

Source: Applied Surface Science

DOI: 10.1016/0169-4332(91)90283-p

Authors: W. Kaplan, S.-L. Zhang, H. Norström, M. Östling, A. Lindberg

Institution: KTH Royal Institute of Technology

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2017526693

FWCI: 0.585

Cites: 9

Cited by: 6

Related to: 10