Fabrication of a Si1-xGex Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor Deposition
Year: 1993
Type: article
Abstract: A method for growing the high-quality strained epitaxial heterostructure of Si/Si1-x Ge x /Si by low-pressure chemical vapor deposition (CVD) and the fabrication of Si1-x Ge x -channel metal-oxide-semiconductor field-effect transistors (MOSFET's) with a high Ge fraction layer have been investigated. It is found that lowering of the deposition temperature of the Si1-x Ge x and Si capping layers is necessary with increasing Ge fraction in order to prevent island growth of the layers. With the use of the optimized fabrication process, Si/Si1-x Ge x /Si heterostructures with flat surfaces and interfaces were realized, and a high-performance Si0.5Ge0.5-channel MOSFET has been achieved with a large mobility enhancement of about 70% at 300 K and over 150% at 77 K compared with that of a MOSFET without a Si1-x Ge x channel.
DOI: 10.1143/jjap.32.438
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2017531464