Year: 1970
Type: article
Abstract: An 80 watt cw CO 2 laser has been used to evaporate thin films of Al 2 O 3 on to p- and n-type silicon. Films in the range 50-500 nm have been deposited. Capacitance-voltage measurements have been carried out on MOS devices made on these films. Results indicate changes of resistivity of the silicon substrate which could be attributed to the diffusion of laser-induced Al ions into the silicon. Another aspect of the films is the change of stoichiometry of aluminium oxide as a result of annealing. A time-dependent hysteresis has been observed.
Authors: N Mandani, K G Nichols
Institution: University of Southampton
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
Funder: University of Southampton
OpenAlex ID: W2017545600