Low-temperature grain growth of initially 〈100〉 textured polycrystalline silicon films amorphized by silicon ion implantation with normal incident angle
Year: 1986
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.336831
Authors: Koji Egami, Atsushi Ogura, Masakazu Kimura
Institution: NEC (Japan)
Language: English
Subfield: Surfaces, Coatings and Films
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2017551979