Atomic Layer Deposition of Al2O3 onto Sn-Doped In2O3: Absence of Self-Limited Adsorption during Initial Growth by Oxygen Diffusion from the Substrate and Band Offset Modification by Fermi Level Pinning in Al2O3
Year: 2012
Type: article
Source: Chemistry of Materials
DOI: 10.1021/cm301732t
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: Deutsche Forschungsgemeinschaft
OpenAlex ID: W2017602893
