Work

InGaAs Nanoflowers Grown by MOCVD

Year: 2012

Type: article

Abstract: InGaAs nanoflowers have been prepared on InP substrates by MOCVD, using TMIn, TMGa and AsH3 as reactive precursors at 420 oC. Through observation by scanning electron microscopy, we find that InGaAs nanoflowers are composed with blades and rods. The flower patterns are controlled by the growth temperature. The nanoflowers of InGaAs are disappeared, when we alter the growth temperature up and down. The InGaAs nanoflowers are In0.98Ga0.02As.

Source: Advanced materials research

DOI: 10.4028/www.scientific.net/amr.560-561.747

Authors: Tie Min Zhang, Guo Qing Miao, Jun Fu, Dong Mei Ban, Zhen Jiang Shen, Hong Lin, Xu Zou, Hong Yan Peng

Institutions: Hainan Normal University, Chinese Academy of Sciences

Language: English

Topic: Nanowire Synthesis and Applications

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

Funders: National Natural Science Foundation of China, People's Government of Jilin Province

OpenAlex ID: W2017612650

FWCI:

Cites: 26

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Related to: 10