Work

Detection of a Large Valley-Orbit Splitting in Silicon with Two-Donor Spectroscopy

Year: 2012

Type: article

Abstract: We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous reports in silicon nanostructures. It was determined using a double dopant transport spectroscopy which eliminates artifacts induced by the environment. Quantitative simulations taking into account the position of the donors with respect to the Si/SiO2 interface and electric field in the wire show that the values found are consistent with the device geometry.

Source: Physical Review Letters

DOI: 10.1103/physrevlett.108.206812

Authors: B. Roche, E. Dupont-Ferrier, B. Voisin, M. Cobian, X. Jehl, R. Wacquez, M. Vinet, Y.-M. Niquet, M. Sanquer

Institutions: Université Joseph Fourier, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Institut Nanosciences et Cryogénie, Laboratoire d'Électronique des Technologies de l'Information

Language: English

Topic: Quantum and electron transport phenomena

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2017679637

FWCI: 4.088

Cites: 22

Cited by: 55

Related to: 10