Work

Effect of Postdeposition Annealing in Oxygen Ambient on Gallium-Nitride-Based MOS Capacitors With Cerium Oxide Gate

Year: 2010

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2010.2087024

Authors: Hock Jin Quah, Kuan Yew Cheong, Zainuriah Hassan, Zainovia Lockman

Institutions: Universiti Sains Islam Malaysia, Universiti Sains Malaysia

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2017725825

FWCI: 4.287

Cites: 65

Cited by: 31

Related to: 10