Work

Density functional and Monte Carlo-based electron transport simulation in 4H-SiC(0001)/SiO2 DMOSFET transition region

Year: 2013

Type: conference-paper

Source: International Conference on Simulation of Semiconductor Processes and Devices

DOI: 10.1109/sispad.2013.6650604

Authors: S. Salemi, D. P. Ettisserry, A. Akturk, N. Goldsman, A. Lelis

Institutions: University of Maryland, College Park, DEVCOM Army Research Laboratory

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2017744896

FWCI: 0.408

Cites: 17

Cited by: 3

Related to: 10