Year: 2003
Type: article
Abstract: Si segregation processes on a monolayer of Ge-covered Si(001) surface during atomic hydrogen irradiation have been monitored in real time using coaxial impact-collision ion scattering spectroscopy and time-of-flight elastic recoil detection analysis. We obtained the amount of Ge atoms replaced with segregated Si atoms quantitatively, which was found to strongly depend on both substrate temperature and hydrogen flux. At substrate temperatures below 150°C, the etching of Ge atoms as well as the surface segregation of Si atoms occurred, while only the Si segregation was observed beyond 150°C. At elevated temperatures, the Si segregation was promoted with increasing atomic hydrogen flux for the surface being occupied by Si monohydrides together with Ge ones, while it was suppressed upon formation of Si dihydrides.
DOI: 10.1143/jjap.42.l485
Institution: The University of Osaka
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2017952043