Work

InGaAs tri-gate MOSFETs with MOVPE regrown source/drain

Year: 2014

Type: conference-paper

Source: Conference digest

DOI: 10.1109/drc.2014.6872327

Authors: Yuichi Mishima, Toru Kanazawa, Haruki Kinoshita, Eiji Uehara, Yasuyuki Miyamoto

Institution: Tokyo Institute of Technology

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2018018428

FWCI: 1.621

Cites: 2

Cited by: 6

Related to: 10