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A study of new surface passivation using P2S5/(NH4)2S on GaAs Schottky barrier diodes

Year: 1990

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.345555

Authors: K. C. Hwang, Sheng S. Li

Institution: University of Florida

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2018087065

FWCI: 2.782

Cites: 10

Cited by: 36

Related to: 10