Work

Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods

Year: 2000

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.373048

Authors: P. Vennéguès, B. Beaumont, V. Bousquet, M. Vaille, P. Gibart

Institutions: Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Université de Lille

OpenAlex ID: W2018157372

FWCI: 7.386

Cites: 24

Cited by: 202

Related to: 10