Efficient TCAD Model for the Evolution of Interstitial Clusters, {311} Defects, and Dislocation Loops in Silicon
Year: 2007
Type: article
Source: MRS Proceedings
Institutions: Synopsys (Switzerland), Synopsys (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2018299541