Planar InP/GaInAsP/GaInAs buried-structure avalanche photodiode
Year: 1984
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.95395
Institution: Fujitsu (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2018448046
