Work

Effect of growth temperature on properties of transparent conducting gallium-doped ZnO films

Year: 2010

Type: article

Source: Semiconductors

DOI: 10.1134/s1063782610010045

Authors: A. Kh. Abduev, A. K. Akhmedov, A. Sh. Asvarov, A. A. Abdullaev, S. N. Sulyanov

Institutions: Russian Academy of Sciences, Dagestan Scientific Center of the Russian Academy of Sciences, Institute of Physics. HI Amirkhanova, A.V. Shubnikov Institute of Crystallography

Language: English

Topic: ZnO doping and properties

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Russian Academy of Sciences

OpenAlex ID: W2018474513

FWCI: 0.839

Cites: 18

Cited by: 17

Related to: 10