Work

Deep levels, transport and THz emission properties of SiGe/Si quantum-well structures

Year: 2009

Type: article

Source: Science China Technological Sciences

DOI: 10.1007/s11431-009-0023-6

Authors: I. V. Antonova, M. S. Kagan, E. P. Neustroev, S. A. Smagulova

Institutions: Russian Academy of Sciences, Institute of Semiconductor Physics, Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2018486882

FWCI: 0.329

Cites: 10

Cited by: 3

Related to: 10