Work

Low temperature buffer growth for modulation doped SiGe/Ge/SiGe heterostructures with high hole mobility

Year: 2000

Type: article

Source: Thin Solid Films

DOI: 10.1016/s0040-6090(00)00872-5

Authors: Tetsuji Ueno, Toshifumi Irisawa, Yasuhiro Shiraki, Akira Uedono, Shoichiro Tanigawa

Institutions: Research Center for Advanced Science and Technology, The University of Tokyo, The University of Tokyo, University of Tsukuba

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Education, Culture, Sports, Science and Technology

OpenAlex ID: W2018512837

FWCI: 3.627

Cites: 8

Cited by: 42

Related to: 10