Growth and Separation of High Quality GaN Epilayer from Sapphire Substrate by Lateral Epitaxial Overgrowth and Wet Chemical Etching
Year: 2010
Type: article
Source: Applied Physics Express
Authors: Chu-Young Cho, Sang-Jun Lee, Sang-Hyun Hong, Seung-Chul Park, Seong-Eun Park, Yongjo Park, Seong-Ju Park
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2018553044