Surface plasmon coupling effect in an InGaN∕GaN single-quantum-well light-emitting diode
Year: 2007
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.2802067
Institution: National Taiwan University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2018559742
