Year: 2013
Type: article
Abstract: We report a ZnO-based 1D1R structure, which is formed by a vertical integration of a FeZnO/MgO switching resistor (1R) and an Ag/MgZnO Schottky diode (1D). The multifunctional ZnO and its compounds are grown through MOCVD with in situ doping. For the R element, the current ratio of the high-resistance state (HRS) over the low-resistance state (LRS) at 1 V is 2.4 × 10 6 . The conduction mechanisms of the HRS and LRS are Poole–Frenkel emission and resistive conduction, respectively. The D element shows the forward/reverse current ratio at ±1 V to be 2.4 × 10 7 . This 1D1R structure exhibits high R HRS / R LRS ratio, excellent rectifying characteristics and robust retention.
Authors: Yang Zhang, Ziqing Duan, Rui Li, Chieh-Jen Ku, Pavel I Reyes, Almamun Ashrafi, Jian Zhong, Yicheng Lu
Institution: Rutgers, The State University of New Jersey
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2018567233