Strain-induced enhancement of the thermoelectric power in thin films of hole-doped La2NiO4+δ
Year: 2013
Type: article
Abstract: We propose a novel route for optimizing the thermoelectric power of a polaronic conductor, independent of its electronic conductivity. This mechanism is exemplified here in thin-films of La2NiO4+δ. Tensile stress induced by epitaxial growth on SrTiO3 doubles the thermoelectric power of ≈15 nm thick films relative to ≈90 nm films, while the electronic conductivity remains practically unchanged. Epitaxial strain influences the statistical contribution to the high temperature thermopower, but introduces a smaller correction to the electronic conductivity. This mechanism provides a new way for optimizing the high temperature thermoelectric performance of polaronic conductors.
Source: APL Materials
DOI: 10.1063/1.4818356
Institutions: Universidade de Santiago de Compostela, Universidade de Vigo
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,200
OpenAlex ID: W2018580767
