Work

Fabrication of InP-based InGaAs ridge quantum wires utilizing selective molecular beam epitaxial growth on (311)A facets

Year: 1996

Type: article

Source: Journal of Electronic Materials

DOI: 10.1007/bf02666513

Authors: H. Fujikura, H. Hasegawa

Institution: Hokkaido University

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2018603078

FWCI: 3.978

Cites: 8

Cited by: 45

Related to: 10