GaAs p-i-n photodiodes made by metalorganic chemical vapor deposition using tertiarybutylarsine and arsine
Year: 1989
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.101973
Institution: United States Naval Research Laboratory
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2018605458