Work

InGaN LEDs prepared on β-Ga2O3(-201) substrates

Year: 2015

Type: conference-paper

Source: Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

DOI: 10.1117/12.2076114

Authors: Kazuyuki Iizuka, Yoshikatsu Morishima, Akito Kuramata, Yu-Jiun Shen, Chang-Yu Tsai, Ying-Yong Su, Gavin Liu, Ta-Cheng Hsu, J. H. Yeh

Institutions: Tamura Corporation (Japan), Epistar (Taiwan)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2018625925

FWCI: 3.127

Cites: 13

Cited by: 7

Related to: 10