Year: 2013
Type: article
Abstract: The electronic properties of Cu${}_{0.07}$Bi${}_{2}$Se${}_{3}$ have been investigated using Shubnikov--de Haas and optical reflectance measurements. Quantum oscillations reveal a bulk, three-dimensional Fermi surface with anisotropy ${k}_{F}^{c}/{k}_{F}^{ab}\ensuremath{\approx}$ 2 and a modest increase in free-carrier concentration and in scattering rate with respect to the undoped Bi${}_{2}$Se${}_{3}$, also confirmed by reflectivity data. The effective mass is almost identical to that of Bi${}_{2}$Se${}_{3}$. Optical conductivity reveals a strong enhancement of the bound impurity bands with Cu addition, suggesting that a significant number of Cu atoms enter the interstitial sites between Bi and Se layers or may even substitute for Bi. This conclusion is also supported by x-ray diffraction measurements, where a significant increase of microstrain was found in Cu${}_{0.07}$Bi${}_{2}$Se${}_{3}$, compared to Bi${}_{2}$Se${}_{3}$.
Source: Physical Review B
Authors: C. Martin, V. Craciun, K. H. Miller, B. Uzakbaiuly, S. Buvaev, H. Berger, A. F. Hebard, D. B. Tanner
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2018648084