Work

Effect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices

Year: 2012

Type: article

Source: Solid State Communications

DOI: 10.1016/j.ssc.2012.04.073

Authors: Feng Zhang, Xiaomin Li, Xiangdong Gao, Liang Wu, Fuwei Zhuge, Qun Wang, Xinjun Liu, Rui Yang, Yong He

Institutions: Chinese Academy of Sciences, Shanghai Institute of Ceramics, State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Gwangju Institute of Science and Technology, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2018709331

FWCI: 1.953

Cites: 25

Cited by: 25

Related to: 10