Year: 2013
Type: conference-paper
Abstract: Tin sulfide (SnSx=1,2) films were deposited by atomic layer deposition (ALD) using Tetrakis(dimethylamino)tin (TDMASn) and hydrogen sulfide (H2S) with different temperatures (120 to 180 °C). The crystal structure of SnSx at 140 °C is SnS2 hexagonal and that of SnSx above 160 °C is observed to have an SnS orthorhombic structure. In addition, the band gap of SnSx ALD films above 160 °C displayed ~ 1.66 eV changing sharply in comparison with ~ 2.50 eV of SnSx deposited below 140°C. This data indicates that process temperatures play an important role in the effect of SnSx deposition. Therefore, SnS2 and SnS films can be widely used as alternative materials for thin film solar.
Source: ECS Transactions
Authors: Giyul Ham, Seokyoon Shin, Joohyun Park, Hyeongtag Jeon
Institution: Hanyang University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2018757290