Work

Modeling of Heat Transfer and Kinetics of Physical Vapor Transport Growth of Silicon Carbide Crystals

Year: 2001

Type: article

Source: ASME Journal of Heat and Mass Transfer

DOI: 10.1115/1.1409263

Authors: Q.-S. Chen, H. Zhang, V. Prasad, C. M. Balkas, N. K. Yushin

Institutions: State University of New York, Stony Brook University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Office of Naval Research

OpenAlex ID: W2018914591

FWCI: 4.005

Cites: 32

Cited by: 51

Related to: 10