Extremely sharp erbium-related intra-4f-shell photoluminescence of erbium-doped GaAs grown by metalorganic chemical vapor deposition
Year: 1988
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.99807
Institutions: NTT (Japan), NTT Basic Research Laboratories
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2018956401