Work

InGaP/InGaAs MOS-PHEMT with a nanoscale liquid phase-oxidized InGaP dielectric

Year: 2011

Type: article

Source: Solid-State Electronics

DOI: 10.1016/j.sse.2011.09.011

Authors: Hsien-Cheng Lin, Fang-Ming Lee, Yu-Chun Cheng, Kuan-Wei Lee, Feri Adriyanto, Yeong-Her Wang

Institutions: National Cheng Kung University, I-Shou University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Science Council

OpenAlex ID: W2018996450

FWCI: 0.867

Cites: 21

Cited by: 6

Related to: 10