Work

The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT’s on SiC substrates

Year: 2010

Type: article

Source: Microelectronic Engineering

DOI: 10.1016/j.mee.2010.09.027

Authors: M. Gassoumi, M.M. Ben Salem, S. Saadaoui, B. Grimbert, J. Fontaine, C. gaquiere, H. Maaref

Institutions: University of Monastir, Université de Lille, Institut d'Electronique, de Microélectronique et de Nanotechnologie

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2019388673

FWCI: 1.417

Cites: 16

Cited by: 29

Related to: 10