Work

Low temperature liquid phase epitaxy growth for room-temperature cw operation of 1.55-μm InGaAsP/InP double-heterostructure laser

Year: 1980

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.91473

Authors: K. Takahei, H. Hagai, H. Kawaguchi

Institution: NTT (Japan)

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2019470643

FWCI: 11.7

Cites: 7

Cited by: 31

Related to: 10