Work

Wavelength elongation and improved emission efficiency of MOCVD-grown InAs quantum dots by GaNAs buffer layer

Year: 2006

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2006.10.174

Authors: R. Suzuki, T. Miyamoto, F. Koyama

Institution: Tokyo Institute of Technology

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Education, Culture, Sports, Science and Technology

OpenAlex ID: W2019726482

FWCI: 0.56

Cites: 14

Cited by: 4

Related to: 10