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Avoidance of Substrate Damage upon Laser Recrystallization of a SOI Layer

Year: 1991

Type: article

Abstract: The substrate damage (SD) induced by laser recrystallization of a polysilicon layer insulated from a Si substrate by a layer is discussed. The SD can be detected by simple methods which offer the advantage of rapidly available results. Measures to prevent substrate damage are presented and discussed. Their effectiveness is proved by the fact that after argon laser recrystallization of a SOI layer substrate, NMOS devices showed no change in their characteristics.

Source: Journal of The Electrochemical Society

DOI: 10.1149/1.2085727

Authors: W. van der Wel, R. Buchner, K. Haberger, S. Seitz, J. Weber, P. Seegebrecht

Institution: Fraunhofer-Gesellschaft

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2019795397

FWCI: 0.448

Cites:

Cited by: 2

Related to: 10