Work

Temperature dependence of avalanche breakdown for epitaxial diodes in 4H silicon carbide

Year: 1998

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.122303

Authors: A. O. Konstantinov, N. Nordell, Q. Wahab, U. Lindefelt

Institution: Linköping University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2019835017

FWCI: 3.784

Cites: 8

Cited by: 43

Related to: 10