Work

1.3 μm InAs/GaAs quantum dot lasers on Si substrates by low-resistivity, Au-free metal-mediated wafer bonding

Year: 2012

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.4742198

Authors: Tomohiko Tatsumi, Katsuaki Tanabe, Katsuyuki Watanabe, Satoshi Iwamoto, Yasuhiko Arakawa

Institutions: Institute of Industrial Science, The University of Tokyo, The University of Tokyo, Institute for Nano Quantum Information Electronics, The University of Tokyo

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2019931323

FWCI: 1.2

Cites: 25

Cited by: 17

Related to: 10